Numerical Modeling of Mos-devices: Methods and Problems
نویسنده
چکیده
Methods and problems in the field of modern MOS-modeling are reviewed. Models for surface scattering and impact ionization, physical parameters which are of particular relevance for MOS-Transistor simulation programs, are explained. The various conceptional approaches for the numerical solution of the classical semiconductor equations are compared. An example of application of a simulation program on the analysis of problems which are important at present is sketched.
منابع مشابه
Chapter 8 ON MODELING MOS - DEVICES
The topic of modern MOS-Transistor modeling is reviewed. Models for surface scattering and impact ionization, physical parameters which are of particular relevance for MOS-Transistor simulation programs, are explained. Guidelines to a mathematical analysis of the fundamental equations, which allow the judgement of numerical methods for their applicability, are presented. Examples of application...
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